Diodes DMP32D4SFB - Manual (Page 2)

DMP32D4SFB
Document number: DS36161 Rev. 2 - 2
2 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMP32D4SFB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= -10V
T
A
= +25°C
T
A
= +70°C
I
D
-400
-300
mA
Continuous Drain Current (Note 6) V
GS
= -10V
T
A
= +25°C
T
A
= +70°C
I
D
-500
-400
mA
Pulsed Drain Current (Note 5) I
DM
-1 A
Maximum Body Diode continuous Current I
S
-800 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
0.5
W
(Note 6) 1.2
Thermal Resistance, Junction to Ambient
(Note 5)
R
JA
273
°C/W
(Note 6) 105
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 - - V V
GS
= 0V, I
D
= -1mA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - -1 µA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±10 µA V
GS
= ±16V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.3 - -2.3 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
- -
2.4
Ω
V
GS
= -10V, I
D
= -200mA
4 V
GS
= -4.5V, I
D
= -200mA
16 V
GS
= -2.5V, I
D
= -10mA
Forward Transfer Admittance |Y
fs
| - 6 - S V
DS
= -10V, I
D
= -400mA
Diode Forward Voltage V
SD
- 0.8 1.2 V V
GS
= 0V, I
S
= -300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 51 - pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 11 - pF
Reverse Transfer Capacitance C
rss
- 9 - pF
Total Gate Charge Q
g
- 0.6 - nC V
GS
= -4.5V
V
DS
= -10V,
I
D
= -200mA
Total Gate Charge Q
g
- 1.3 - nC
V
GS
= -10V Gate-Source Charge Q
gs
- 0.2 - nC
Gate-Drain Charge Q
gd
- 0.2 - nC
Turn-On Delay Time t
D(on)
- 3.6 - ns
V
DS
= -15V, I
D
= -500mA
V
GS
= -10V, R
G
= 1Ω
Turn-On Rise Time t
r
- 8.5 - ns
Turn-Off Delay Time t
D(off)
- 31.3 - ns
Turn-Off Fall Time t
f
- 20.2 - ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.