Diodes DMP32D4SW - Manual (Page 2)

DMP32D4SW
Document number: DS35823 Rev. 3 - 2
2 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMP32D4SW
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
T
A
= +25°C
T
A
= +70°C
I
D
250
200
mA
Pulsed Drain Current (Note 6) I
DM
-1 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
300
mW
(Note 6) 432
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
398
°C/W (Note 6) 290
Thermal Resistance, Junction to Case (Note 5) R
θJC
142
Operating and Storage Temperature Range T
J
, T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 - - V V
GS
= 0V, I
D
= -1mA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - -1 µA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±10 µA V
GS
= ±16V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.4 - -2.4 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
- -
2.4
Ω
V
GS
= -10V, I
D
= -0.5A
4 V
GS
= -4.5V, I
D
= -0.3A
Forward Transfer Admittance |Y
fs
| - 6 - S V
DS
= -10V, I
D
= -400mA
Diode Forward Voltage V
SD
- 0.8 1.2 V V
GS
= 0V, I
S
= -300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 51.16 - pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 10.85 - pF
Reverse Transfer Capacitance C
rss
- 8.88 - pF
Gate Resistance R
g
- 275 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 0.6 - nC V
GS
= -4.5V
V
DS
= -10V,
I
D
= -1A
Total Gate Charge Q
g
- 1.2 - nC
V
GS
= -10V Gate-Source Charge Q
gs
- 0.2 - nC
Gate-Drain Charge Q
gd
- 0.3 - nC
Turn-On Delay Time t
D(on)
- 9.86 - ns
V
DS
= -15V, I
D
= -1A
V
GS
= -10V, R
G
= 6Ω
Turn-On Rise Time t
r
- 11.5 - ns
Turn-Off Delay Time t
D(off)
- 31.8 - ns
Turn-Off Fall Time t
f
- 21.9 - ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.