Dmp32d9ufz new prod uc t new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP32D9UFZ User Manual

Page 2: Electrical characteristics

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DMP32D9UFZ

Document number: DS36842 Rev. 2 - 2

2 of 6

www.diodes.com

June 2014

© Diodes Incorporated

DMP32D9UFZ

NEW PROD

UC

T

NEW PROD

UC

T




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

±10 V

Continuous Drain Current (Note 5) V

GS

= -4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-200
-100

mA

Pulsed Drain Current (Note 6)

I

DM

-500 mA



Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

Steady State

P

D

390 mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

R

θJA

322 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30 —

— V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current @T

C

= +25°C

I

DSS

100 nA

V

DS

= -24V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±10 µA

V

GS

= ±10V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.4 —

-1.0 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

5

V

GS

= -4.5V, I

D

= -100mA

6

V

GS

= -2.5V, I

D

= -50mA

7

V

GS

= -1.8V, I

D

= -20mA

10

V

GS

= -1.5V, I

D

= -10mA

6 —

V

GS

= -1.2V, I

D

= -1mA

Diode Forward Voltage

V

SD

-0.75 -1.0 V V

GS

= 0V, I

S

= -10mA

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

22.5

pF

V

DS

= -15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

2.9

pF

Reverse Transfer Capacitance

C

rss

2.1 —

pF

Total Gate Charge

Q

g

0.35

nC

V

GS

= -4.5V, V

DS

=- 15V,

I

D

= -200mA

Gate-Source Charge

Q

gs

0.06

nC

Gate-Drain Charge

Q

gd

0.09 —

nC

Turn-On Delay Time

t

D(on)

3.1

ns

V

DD

= -10V, V

GS

= -4.5V,

R

G

= 6Ω, I

D

= -200mA

Turn-On Rise Time

t

r

2.3

ns

Turn-Off Delay Time

t

D(off)

19.9 —

ns

Turn-Off Fall Time

t

f

10.5

ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.








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