Diodes DMP4015SK3Q - Manual (Page 2)

DMP4015SK3Q
Document number: DS36665 Rev. 12- 2
2 of 7
www.diodes.com
December 2013
© Diodes Incorporated
DMP4015SK3Q
Maximum Ratings
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-40 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
C
= +25°C
T
C
= +70°C
I
D
-35
-27
A
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-14
-11
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-22
-18
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
-100 A
Maximum Body Diode Forward Current (Note 6) I
S
-5.5 A
Avalanche Current (Note 7) I
AS
-57 A
Avalanche Energy (Note 7) E
AS
162 mJ
Thermal Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
3.5
W
T
A
= +70°C 2.2
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
36
°C/W t<10s 15
Thermal Resistance, Junction to Case (Note 6) Steady state R
θJC
4.5
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-40 ⎯ ⎯ V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 µ A V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.5 -2 -2.5 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS(ON)
⎯ 7 11
mΩ
V
GS
= -10V, I
D
= -9.8A
⎯ 9 15 V
GS
= -4.5V, I
D
= -9.8A
Forward Transfer Admittance |Y
fs
| ⎯ 26 ⎯ S V
DS
= -20V, I
D
= -9.8A
Diode Forward Voltage V
SD
⎯ -0.7 -1 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 4234 ⎯
pF
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 1036 ⎯
Reverse Transfer Capacitance C
rss
⎯ 526 ⎯
Gate Resistance R
G
⎯ 7.77 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
⎯ 47.5 ⎯
nC
V
DS
= -20V, V
GS
= -5V
I
D
= -9.8A
Gate-Source Charge Q
gs
⎯ 14.2 ⎯
Gate-Drain Charge Q
gd
⎯ 13.5 ⎯
Turn-On Delay Time t
D(on)
⎯ 13.2 ⎯
ns
V
GS
= -10V, V
DD
= -20V,
R
G
= 6Ω, I
D
= -1A
Turn-On Rise Time t
r
⎯ 10 ⎯
Turn-Off Delay Time t
D(off)
⎯ 302.7 ⎯
Turn-Off Fall Time t
f
⎯ 137.9 ⎯
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. UIS in production with L = 0.1mH, T
J
= +25°C.
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.