Diodes DMP4015SPSQ - Manual (Page 2)

DMP4015SPSQ
Document number: DS36681 Rev. 2 - 2
2 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMP4015SPSQ
NEW PROD
UC
T
POWERDI is a registered trademark of Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-40 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-8.5
-6.8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-13.0
-10.5
A
Continuous Drain Current (Note 7) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-11.0
-8.7
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-17.0
-13.5
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
-100 A
Maximum Body Diode Continuous Current (Note 7) I
S
-3.5 A
Avalanche Current (Note 8) I
AS
-22 A
Avalanche Energy (Note 8) E
AS
242 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
96.4 °C/W
t<10s 40.6 °C/W
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
2.1
W
T
A
= +70°C 1.4
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
R
θJA
55.0 °C/W
t<10s 24.0 °C/W
Thermal Resistance, Junction to Case (Note 7) R
θJC
4.15 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
-40 ⎯ ⎯ V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 µ A V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
-1.5 -2 -2.5 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 7 11
mΩ
V
GS
= -10V, I
D
= -9.8A
⎯ 9 15 V
GS
= -4.5V, I
D
= -9.8A
Forward Transfer Admittance |Y
fs
| ⎯ 26 ⎯ S V
DS
= -20V, I
D
= -9.8A
Diode Forward Voltage V
SD
⎯ -0.7 -1 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
⎯ 4234 ⎯
pF
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 1036 ⎯
Reverse Transfer Capacitance C
rss
⎯ 526 ⎯
Gate Resistance R
G
⎯ 7.77 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
⎯ 47.5 ⎯
nC
V
DS
= -20V, V
GS
= -5V
I
D
= -9.8A
Gate-Source Charge Q
gs
⎯ 14.2 ⎯
Gate-Drain Charge Q
gd
⎯ 13.5 ⎯
Turn-On Delay Time t
D(on)
⎯ 13.2 ⎯
ns
V
GS
= -10V, V
DD
= -20V, R
G
= 6Ω,
I
D
= -1A, R
L
= 20Ω
Turn-On Rise Time t
r
⎯ 10 ⎯
Turn-Off Delay Time t
D(off)
⎯ 302.7 ⎯
Turn-Off Fall Time t
f
⎯ 137.9 ⎯
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. UIS in production with L = 0.1mH, TJ = +25°C
9 .Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.