Diodes DMP4015SSS - Manual (Page 2)

DMP4015SSS
Document number: DS35416 Rev. 8 - 2
2 of 7
www.diodes.com
February 2014
© Diodes Incorporated
DMP4015SSS
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-40 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-9.1
-7.2
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-7.8
-6.2
A
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-10.1
-8
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-8.8
-7
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
-100 A
Avalanche Current (Note 7) I
AS
-22 A
Avalanche Energy (Note 7) E
AS
242 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.45 W
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
88 °C/W
Total Power Dissipation (Note 6) P
D
1.82 W
Thermal Resistance, Junction to Ambient (Note 6) R
θJA
70 °C/W
Thermal Resistance, Junction to Case (Note 6) R
θJc
7.6 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-40   V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current I
DSS
  -1 μA V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 25V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.5 -2 -2.5 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
 7 11 
mΩ
V
GS
= -10V, I
D
= -9.8A
 9 15 V
GS
= -4.5V, I
D
= -9.8A
Forward Transfer Admittance |Y
fs
|  26  S V
DS
= -20V, I
D
= -9.8A
Diode Forward Voltage (Note 5) V
SD
 -0.7 -1 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
 4234 
pF
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
 1036 
Reverse Transfer Capacitance C
rss
 526 
Gate Resistance R
G
 7.77  Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
 47.5 
nC 
V
DS
= -20V, V
GS
= -5V
I
D
= -9.8A
Gate-Source Charge Q
gs
 14.2 
Gate-Drain Charge Q
gd
 13.5 
Turn-On Delay Time t
D(on)
 13.2 
ns
V
GS
= -10V, V
DD
= -20V, R
G
= 6Ω,
I
D
= -1A, R
L
= 20Ω
Turn-On Rise Time t
r
 10 
Turn-Off Delay Time t
D(off)
 302.7 
Turn-Off Fall Time t
f
 137.9 
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .UIS in production with L = 1mH, T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.