Diodes DMP4047SSD - Manual (Page 2)

DMP4047SSD
Document Number DS36353 Rev. 3 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMP4047SSD
NEW PROD
UC
T
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-40 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 7) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-5.1
-4.1
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
-6.5
-5.2
A
Continuous Drain Current (Note 7) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.6
-3.7
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
-5.9
-4.7
A
Maximum Body Diode Continuous Current I
S
-2.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-40 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
98
°C/W
t < 10s 59
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
1.8
W
T
A
= +70°C 1.1
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
R
θJA
71
°C/W t < 10s 43
Thermal Resistance, Junction to Case (Note 7) R
θJC
11.8
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-40   V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
  -1 µA V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage I
GSS
  ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.0  -3.0 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)

33 45
mΩ
V
GS
= -10V, I
D
= -4.4A
40 55 V
GS
= -4.5V, I
D
= -3.7A
Diode Forward Voltage V
SD
 -0.75 -1.2 V V
GS
= 0V, I
S
= -3.9A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss  1154  pF
V
DS
= -20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance Coss  84  pF
Reverse Transfer Capacitance Crss  66  pF
Gate Resistance RG  12.6  Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V) Qg  10.6  nC
V
DS
= -20V, I
D
= -4.9A
Total Gate Charge (V
GS
= -10V) Qg  21.5  nC
Gate-Source Charge Qgs  2.2  nC
Gate-Drain Charge Qgd  3.3  nC
Turn-On Delay Time tD(on)  8.7  ns
V
DS
= -20V, I
D
= -3.9A
V
GS
= 4.5V, R
G
= 1Ω
Turn-On Rise Time tr  19.6  ns
Turn-Off Delay Time tD(off)  34.9  ns
Turn-Off Fall Time tf  25.5  ns
Body Diode Reverse Recovery Time trr  9.61  ns
I
F
= -3.9A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr  3.3  nC
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.