Diodes DMP4050SSS - Manual (Page 4)

DMP4050SSS
Document Number DS32108 Rev 1 - 2
4 of 8
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP4050SSS
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-40 ⎯ ⎯ V I
D
= -250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -0.5 μA V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(th)
-1.0 ⎯ -3.0 V I D = -250
μA, V
DS = V GS
Static Drain-Source On-Resistance (Note 7) R DS (ON)
⎯
0.038 0.050
Ω
V
GS
= -10V, I
D
= -6A
0.055 0.079 V
GS
= -4.5V, I
D
= -5A
Forward Transconductance (Notes 7 & 8) g fs
⎯ 14 ⎯ S V DS = -15V, I D = -6A
Diode Forward Voltage (Note 7) V
SD
⎯ -0.86 -1.2 V I
S
= -6A, V
GS
= 0V
Reverse recovery time (Note 8) t
rr
18.5 ⎯ ns
I
S
= -2.5, di/dt= 100A/
μs
Reverse recovery charge (Note 8) Q
rr
⎯ 15.6 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ 674 ⎯ pF
V
DS
= -20V, V
GS
= 0V
f= 1MHz
Output Capacitance C
oss
⎯ 115 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 67.7 ⎯ pF
Total Gate Charge (Note 9) Q
g
⎯ 6.9 ⎯ nC V
GS
= -4.5V
V
DS
= -20V
I
D
= -6A
Total Gate Charge (Note 9) Q
g
⎯ 13.9 ⎯ nC
V GS = -10V Gate-Source Charge (Note 9) Q gs
⎯ 2 ⎯ nC
Gate-Drain Charge (Note 9) Q
gd
⎯ 3.4 ⎯ nC
Turn-On Delay Time (Note 9) t
D(on)
⎯ 1.9 ⎯ ns
V
DD
= -20V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 9) t r
⎯ 3.1 ⎯ ns
Turn-Off Delay Time (Note 9) t
D(off)
⎯ 31.5 ⎯ ns
Turn-Off Fall Time (Note 9) t
f
⎯ 12.6 ⎯ ns
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.