Diodes DMP56D0UFB - Manual (Page 2)

DMP56D0UFB
Document number: DS36175 Rev. 2 - 2
2 of 5
www.diodes.com
June 2013
© Diodes Incorporated
DMP56D0UFB
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-50 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 5) Steady T
A
= +25°C I
D
-200 mA
Pulsed Drain Current (Note 6) I
DM
-700 mA
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
425 mW
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
θJA
275 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-50 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
— — -10 µA V
DS
= -50V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±1 µA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 — -1.2 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
——
4.6
6
6
8
Ω
V
GS
= -4.0V, I
D
= -100mA
V
GS
= -2.5V, I
D
= -80mA
Forward Transfer Admittance |Y
fs
| 100 — — mS V
DS
= -5V, I
D
= -100mA
Diode Forward Voltage (Note 7) V
SD
— — -1.2 V V
GS
= 0V, I
S
= -100mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 50.54 — pF
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 3.49 — pF
Reverse Transfer Capacitance C
rss
— 2.42 — pF
Gate Resistance R
G
— 201 — Ω
V
DS
= 0V, V
GS
= 0V,
f = 1.0MHz
Total Gate Charge V
GS
= 4.5V Q
g
— 0.58 — nC
V
GS
= -4V, V
DS
= -25V,
I
D
= -100mA
Gate-Source Charge Q
gs
— 0.09 — nC
Gate-Drain Charge Q
gd
— 0.14 — nC
Turn-On Delay Time t
D(on)
— 4.46 — nS
V
DD
= -30V, I
D
= -0.27A,
V
GEN
= -4V
,
R
GEN
= 6Ω
Turn-On Rise Time t
r
— 6.63 — nS
Turn-Off Delay Time t
D(off)
— 21.9 — nS
Turn-Off Fall Time t
f
— 15.0 — nS
Notes: 5. Device mounted on FR-4 PCB. t ≤5 sec.
6. Pulse width ≤10µS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.