Diodes DMP4051LK3 - Manual (Page 4)

DMP4051LK3
Document Number DS32114 Rev. 3 - 2
4 of 9
www.diodes.com
February 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP4051LK3
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-40 ⎯ ⎯ V I
D
= -250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -0.5 μA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0 ⎯ -3.0 V I
D
= -250 μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10) R
DS (ON)
⎯
0.041 0.051
Ω
V
GS
= -10V, I
D
= -12A
0.059 0.085 V
GS
= -4.5V, I
D
= -8A
Forward Transconductance (Notes 10 & 11) g
fs
⎯ 16.6 ⎯ S V
DS
= -15V, I
D
= -12A
Diode Forward Voltage (Note 10) V
SD
⎯ -0.98 -1.2 V I
S
= -12A, V
GS
= 0V
Reverse recovery time (Note 11) t rr
138 ⎯ ns
I
S
= -12A, di/dt = 100A/ μs
Reverse recovery charge (Note 11) Q
rr
⎯ 841 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C iss
⎯ 674 ⎯ pF
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 115 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 67.7 ⎯ pF
Total Gate Charge (Note 12) Q g
⎯ 7.0 ⎯ nC V GS = -4.5V
V DS = -20V
I D = -12A
Total Gate Charge (Note 12) Q
g
⎯ 14 ⎯ nC
V
GS
= -10V Gate-Source Charge (Note 12) Q
gs
⎯ 2.2 ⎯ nC
Gate-Drain Charge (Note 12) Q gd
⎯ 3.7 ⎯ nC
Turn-On Delay Time (Note 12) t
D(on)
⎯ 2.3 ⎯ ns
V DD = -20V, V GS = -10V
I
D
= -12A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 12) t
r
⎯ 14.1 ⎯ ns
Turn-Off Delay Time (Note 12) t
D(off)
⎯ 25.1 ⎯ ns
Turn-Off Fall Time (Note 12) t
f
⎯ 14.3 ⎯ ns
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperatures.