Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP56D0UV User Manual

Page 2: Dmp56d0uv

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DMP56D0UV

Document number: DS36174 Rev. 2 - 2

2 of 5

www.diodes.com

June 2013

© Diodes Incorporated

DMP56D0UV



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-50 V

Gate-Source Voltage

Continuous

V

GSS

8

V

Drain Current (Note 5)

Continuous

I

D

-160 mA

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

I

DM

-700 mA


Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

400 mW

Thermal Resistance, Junction to Ambient (Note 5)

R

JA

313

C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

C


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

-50

V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS

-10 µA

V

DS

= -50V, V

GS

= 0V

Gate-Body Leakage

I

GSS

1

µA V

GS

=

8V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

-0.5

-1.2 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS (ON)



4.6
6.0

6
8

V

GS

= -4V, I

D

= -100mA

V

GS

= -2.5V, I

D

= -80mA

Forward Transfer Admittance

Y

fs

100

mS V

DS

= -5V, I

D

= -100mA

Diode Forward Voltage

V

SD



-1.2 V

V

GS

= 0V, I

S

= -100mA

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

50.54

pF

V

DS

= -25V, V

GS

= 0V, f = 1.0MHz

Output Capacitance

C

oss

3.49

pF

Reverse Transfer Capacitance

C

rss

2.42

pF

Gate Resistance

R

G



201



V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge V

GS

= 4.5V

Q

g



0.58



nC

V

GS

= -4V, V

DS

= -25V,

I

D

= -100mA

Gate-Source Charge

Q

gs

0.09

nC

Gate-Drain Charge

Q

gd

0.14

nC

Turn-On Delay Time

t

D(on)

4.46

nS

V

DD

= -30V

,

I

D

= -0.27A

,

V

GEN

= -4V

,

R

GEN

= 6Ω

Turn-On Rise Time

t

r

6.63

nS

Turn-Off Delay Time

t

D(off)



21.9



nS

Turn-Off Fall Time

t

f



15.0



nS

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.






















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