Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP58D0LFB User Manual

Page 2: Dmp58d0lfb

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DMP58D0LFB

Document number: DS35206 Rev. 6 - 2

2 of 6

www.diodes.com

September 2012

© Diodes Incorporated

DMP58D0LFB



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

-50 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current (Note 4) V

GS

= -5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-180
-150

mA

Continuous Drain Current (Note 5) V

GS

= -5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-310
-250

mA

Pulsed Drain Current (Note 6)

I

DM

-500 mA



Thermal Characteristics

Characteristic Symbol

Max

Unit

Power Dissipation (Note 4)

P

D

0.47 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 4)

R

θJA

258 °C/W

Power Dissipation (Note 5)

P

D

1.22 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

θJA

105 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-50 —

— V

V

GS

= 0V, I

D

= -250

μA

Zero Gate Voltage Drain Current T

J

= 25°C

I

DSS

-1.0 µA

V

DS

= -50V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— ±5 µA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.8 — -2.1 V

V

DS

= V

GS

, I

D

= -250

μA

Static Drain-Source On-Resistance

R

DS (ON)

6 8

V

GS

= -5V, I

D

= -100mA

12 18

V

GS

= -2.5V, I

D

= -10mA

Forward Transfer Admittance

|Y

fs

|

0.05 —

S

V

DS

= -25V, I

D

= -100mA

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

27 —

pF

V

DS

= -25V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

4.0 —

Reverse Transfer Capacitance

C

rss

1.4 —

Turn-On Delay Time

t

D(on)

30.7 —

ns

V

GS

= -4.5V, V

DS

= -30V,

R

G

= 50

Ω, I

D

= -10mA

Turn-On Rise Time

t

r

84.1 —

Turn-Off Delay Time

t

D(off)

201.8 —

Turn-Off Fall Time

t

f

32.2 —

Notes:

4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

















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