Diodes DMP58D0SV - Manual

DMP58D0SV
Document number: DS31293 Rev. 4 - 2
1 of 5
www.diodes.com
July 2009
© Diodes Incorporated
DMP58D0SV
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low
On-Resistance
• ESD Protected Gate to 500V
•
Low Input Capacitance
•
Fast Switching Speed
•
Lead Free By Design/RoHS Compliant (Note 3)
• “Green” Device (Note 4)
•
Qualified to AEC-Q 101 Standards for High Reliability
Mechanical Data
• Case:
SOT-563
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-50 V
Drain-Gate Voltage (Note 1) V
DGR
-50 V
Gate-Source Voltage Continuous V
GSS
±20 V
Drain Current (Note 2) Continuous I
D
-160 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 2) P
D
400 mW
Thermal Resistance, Junction to Ambient (Note 2) R θJA
313 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-50 ⎯ ⎯ V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current I DSS
⎯ ⎯ -1 μA V
DS = -50V, V GS = 0V
Gate-Body Leakage I
GSS
⎯ ⎯ ±5 μA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-0.8 ⎯ -2.1 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
6 8
Ω V
GS
= -5V, I
D
= -0.100A
Forward Transconductance g
FS
0.05 ⎯ ⎯ S V
DS
= -25V, I
D
= -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 27 ⎯ pF
V DS = -25V, V GS = 0V, f = 1.0MHz Output Capacitance C oss
⎯ 4 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 1.4 ⎯ pF
Notes: 1. R
GS
≤ 20KΩ.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
SOT-563
TOP VIEW
Internal Schematic
TOP VIEW
S
1
D 1
D
2
S
2
G
1
G 2
ESD protected to 500V
Please click here to visit our online spice models database.