Electrical characteristics q2 p-channel, Dmc1017upd – Diodes DMC1017UPD User Manual

Page 5

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DMC1017UPD

Document number: DS36903 Rev. 1 - 0

5 of 9

www.diodes.com

April 2014

© Diodes Incorporated

DMC1017UPD



Electrical Characteristics Q2 P-Channel

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

-12

V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS

-1 µA

V

DS

= -12V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100

nA

V

GS

= ±8V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

-0.6

-1.5 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS(ON)

21 32

mΩ

V

GS

= -4.5V, I

D

= -8.9A

41 53

V

GS

= -2.5V, I

D

= -6.9A

Diode Forward Voltage

V

SD

-0.7 -1.2 V

V

GS

= 0V, I

S

= -2.9A

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

2100

pF

V

DS

= -6V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

872

Reverse Transfer Capacitance

C

rss

626

Gate Resistance

R

G

23.1

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge (V

GS

= -4.5V)

Q

g

23.7

nC

V

DS

= -6V, I

D

= -8.9A

Total Gate Charge (V

GS

= -8V)

Q

g

38.8

Gate-Source Charge

Q

gs

5.3

Gate-Drain Charge

Q

gd

9.8

Turn-On Delay Time

t

D(on)

10.6

nS

V

DD

= -6V, R

L

= 6Ω

V

GS

= -4.5V, R

G

= 6Ω, I

D

= -1A

Turn-On Rise Time

t

r

25.5

Turn-Off Delay Time

t

D(off)

144

Turn-Off Fall Time

t

f

129

Body Diode Reverse Recovery Time

t

rr

48.9 —

nS

I

F

= -8.9A, di/dt = -100A/μs

Body Diode Reverse Recovery Charge

Q

rr

15.3 —

nC

I

F

= -8.9A, di/dt = -100A/μs

Notes: 6.

I

AS

and E

AS

rating are based on low frequency and duty cycles to keep T

J

= 25°C.

7. Short duration pulse test used to minimize self-heating effect.



-V , DRAIN -SOURCE VOLTAGE (V)

Figure 11 Typical Output Characteristics

DS

-I

, D

R

AI

N

C

U

R

R

E

N

T

(A

)

D

0.0

5.0

10.0

15.0

20.0

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

V

= -1.8V

GS

V

= -2.0V

GS

V

= -3.0V

GS

V

= -4.0V

GS

V

= -8.0V

GS

V

= -4.5V

GS

V

= -2.5V

GS

V

= -3.5V

GS

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 12 Typical Transfer Characteristics

-I

, D

R

AI

N

C

U

R

R

E

N

T

(A)

D

0

2

4

6

8

10

12

14

16

18

20

0

0.5

1

1.5

2

2.5

3

3.5

4

T = 150 C

A

°

T = 125 C

A

°

T = 85 C

A

°

T = 25 C

A

°

T = -55 C

A

°

V

= -5.0V

DS







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