Dmc2004vk, Maximum ratings n-channel – q, Maximum ratings p-channel – q – Diodes DMC2004VK User Manual

Page 2: Thermal characteristics, Electrical characteristics n-channel – q

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DMC2004VK

Document number: DS30925 Rev. 6 - 2

2 of 8

www.diodes.com

January 2013

© Diodes Incorporated

DMC2004VK




Maximum Ratings N-CHANNEL – Q

1 (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Drain Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±8

V

Drain Current (Note 5)

T

A

= +25°C

T

A

= +85°C

I

D

670
480

mA


Maximum Ratings P-CHANNEL – Q

2 (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Drain Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±8

V

Drain Current (Note 5)

T

A

= +25°C

T

A

= +85°C

I

D

-530
-380

mA

Thermal Characteristics

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

0.45 W

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

R

θJA

281 °C/W

t<10s 210

°C/W

Total Power Dissipation (Note 6)

P

D

1 W

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

R

θJA

129 °C/W

t<10s 97

°C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Electrical Characteristics N-CHANNEL – Q

1

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

20

V

V

GS

= 0V, I

D

= 10µA

Zero Gate Voltage Drain Current

I

DSS

1.0 µA

V

DS

= 16V, V

GS

= 0V

Gate-Source Leakage

I

GSS

± 1.0

µA

V

GS

= ±4.5V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.5

1.0 V

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance

R

DS (ON)



0.4
0.5
0.7

0.55
0.70
0.90

Ω

V

GS

= 4.5V, I

D

= 540mA

V

GS

= 2.5V, I

D

= 500mA

V

GS

= 1.8V, I

D

= 350mA

Forward Transfer Admittance (Note 8)

|Y

fs

|

200

mS

V

DS

=10V, I

D

= 0.2A

Diode Forward Voltage

V

SD

0.5

1.2 V

V

GS

= 0V, I

S

= 115mA

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

150 pF

V

DS

= 16V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

25 pF

Reverse Transfer Capacitance

C

rss

20 pF

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.













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