Diodes DMC3028LSDX - Manual (Page 2)

DMC3028LSDX
Document number: DS36210 Rev. 3 - 2
2 of 9
www.diodes.com
June 2013
© Diodes Incorporated
DMC3028LSDX
ADVAN
C
E
I
N
F
O
R
MA
T
IO
N
ADVAN
C
E
D
I
N
F
O
RM
AT
IO
N
Maximum Ratings – Q1 and Q2
(@T
A
= +25°C, unless otherwise specified.)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25
°C
P
D
1.2
W
T
A
= +70
°C 0.75
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R • JA
108
°C/W
t<10s 65
Total Power Dissipation (Note 6)
T
A
= +25
°C
P
D
1.5
W
T
A
= +70
°C 0.95
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R ΘJA
85
°C/W t<10s 50
Thermal Resistance, Junction to Case (Note 6) R ΘJC 14.5
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I DSS
  1 µ A V DS = 24V, V GS = 0V
Gate-Source Leakage I
GSS
  ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
1  3 V V DS = V GS , I D = 250µA
Static Drain-Source On-Resistance R DS (ON)
 19 27
m Ω
V
GS
= 10V, I
D
= 6A

22 35 V
GS
= 4.5V, I
D
= 5A
Diode Forward Voltage V SD
 0.7 1.2 V V GS = 0V, I S = 1.3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss

641

pF
V DS = 15V, V GS = 0V
f = 1.0MHz
Output Capacitance C oss
 66 
Reverse Transfer Capacitance C
rss
 51 
Gate Resistance R
G

2.2
 Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V GS = 4.5V) Q g
 6 
nC V
DS
= 15V, I
D
= 10A
Total Gate Charge (V
GS
= 10V) Q
g
 13.2 
Gate-Source Charge Q
gs

1.7

Gate-Drain Charge Q
gd

2.2

Turn-On Delay Time t
D(on)
 3.3 
nS
V GS = 10V, V DD = 15V, R G = 6
Ω,
I
D
= 1A
Turn-On Rise Time t
r
 4.4 
Turn-Off Delay Time t
D(off)

22.3

Turn-Off Fall Time t f
 5.3 
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Characteristic Symbol Q1 Q2 Units
Drain-Source Voltage V
DSS
30 -30 V
Gate-Source Voltage V
GSS
±20 ±20 V
Continuous Drain Current (Note 5) V
GS
=10V
Steady
State
T
A
= +25 °C
T
A
= +70 °C
I
D
5.5
4.1 -5.8
-4.3
A
t<10s
T
A
= +25 °C
T
A
= +70 °C
I
D
7.2
5.7 -7.6
-6.1
A
Maximum Body Diode Forward Current (Note 5) I
S
2.2 -2.2 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
40 -30 A