Electrical characteristics – q1 n-channel, Dmc3028lsd, A product line of diodes incorporated – Diodes DMC3028LSD User Manual
Page 4
DMC3028LSD
Document Revision: 4
4 of 11
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
Electrical Characteristics – Q1 N-Channel
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
30
⎯
⎯
V
I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
0.5
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100 nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
⎯
3.0 V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
⎯
⎯
0.028
Ω
V
GS
= 10V, I
D
= 6.0A
0.045
V
GS
= 4.5V, I
D
= 4.9A
Forward Transconductance (Notes 8 & 9)
g
fs
⎯
12
⎯
S
V
DS
= 15V, I
D
= 6.0A
Diode Forward Voltage (Note 8)
V
SD
⎯
0.68 1.2 V
I
S
= 1.7A, V
GS
= 0V
Reverse recovery time (Note 9)
t
rr
11.5
⎯
ns
I
S
= 1.7A, di/dt= 100A/
μs
Reverse recovery charge (Note 9)
Q
rr
⎯
4.4
⎯
nC
DYNAMIC CHARACTERISTICS (
Note 9
)
Input Capacitance
C
iss
⎯
472
⎯
pF
V
DS
= 15V, V
GS
= 0V
f= 1MHz
Output Capacitance
C
oss
⎯
178
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
65
⎯
pF
Total Gate Charge
Q
g
⎯
5.2
⎯
nC
V
DS
= 15V, V
GS
= 4.5V
I
D
= 6A
Total Gate Charge
Q
g
⎯
10.5
⎯
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 6A
Gate-Source Charge
Q
gs
⎯
1.86
⎯
nC
Gate-Drain Charge
Q
gd
⎯
2.3
⎯
nC
Turn-On Delay Time (Note 10)
t
D(on)
⎯
2.5
⎯
ns
V
DD
= 15V, V
GS
= 10V
I
D
= 1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 10)
t
r
⎯
3.1
⎯
ns
Turn-Off Delay Time (Note 10)
t
D(off)
⎯
14
⎯
ns
Turn-Off Fall Time (Note 10)
t
f
⎯
9.7
⎯
ns
Notes:
8. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.