Dmc4028ssd, Electrical characteristics – q2 p-channel – Diodes DMC4028SSD User Manual
Page 7
DMC4028SSD
Document Number: D35041 Rev: 2 - 2
7 of 11
April 2013
© Diodes Incorporated
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A Product Line of
Diodes Incorporated
DMC4028SSD
Electrical Characteristics – Q2 P-Channel
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-40 — — V
I
D
= -250
µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
— — -0.5 µA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
100
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0 – -3.0 V
I
D
= -250 µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 12)
R
DS(ON)
—
0.039 0.050
Ω
V
GS
= -10V, I
D
= -6A
0.060 0.079
V
GS
= -4.5V, I
D
= -5A
Forward Transconductance (Notes 12 & 13)
g
fs
— 16.6 — S
V
DS
= -15V, I
D
= -6A
Diode Forward Voltage (Note 13)
V
SD
—
-0.865 -1.1 V I
S
= -6A, V
GS
= 0V
Reverse Recovery Time (Note 13)
t
rr
— 138 — ns
I
S
= -6A, di/dt = 100A/µs
Reverse Recovery Charge (Note 13)
Q
rr
— 841 — nC
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
C
iss
—
674
—
pF
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
—
115
—
pF
Reverse Transfer Capacitance
C
rss
—
67.7
—
pF
Total Gate Charge (Note 14)
Q
g
—
7.0
—
nC
V
GS
= -4.5V
V
DS
= -20V
I
D
= -6A
Total Gate Charge (Note 14)
Q
g
—
14
—
nC
V
GS
= -10V
Gate-Source Charge (Note 14)
Q
gs
—
2.2
—
nC
Gate-Drain Charge (Note 14)
Q
gd
—
3.7
—
nC
Turn-On Delay Time (Note 14)
t
D(on)
—
2.3
—
ns
V
DD
= -20V, V
GS
= -10V
I
D
= -6A, R
G
6.0
Turn-On Rise Time (Note 14)
t
r
—
14.1
—
ns
Turn-Off Delay Time (Note 14)
t
D(off)
—
25.1
—
ns
Turn-Off Fall Time (Note 14)
t
f
—
14.3
—
ns
Notes:
12. Measured under pulsed conditions. Pulse width
300µs; duty cycle 2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.