Diodes DMC4050SSD - Manual (Page 2)

DMC4050SSD
Document number: DS33310 Rev. 2 - 2
2 of 11
www.diodes.com
March 2011
© Diodes Incorporated
DMC4050SSD
A Product Line of
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units
Drain-Source Voltage V
DSS
40 -40
V
Gate-Source Voltage V
GSS
±20 ±20
Continuous Drain Current V
GS
= 10V
(Notes 3 & 5)
I
D
5.8 -5.8
A
T A = 70°C (Notes 3 & 5) 4.38 -4.52
(Notes 2 & 5) 4.2 -4.2
(Notes 2 & 6) 5.3 -5.3
Pulsed Drain Current V
GS
= 10V (Notes 4 & 5) I
DM
24.1 -24.9
Continuous Source Current (Body diode) (Notes 3 & 5) I
S
2.5 -2.5
Pulsed Source Current (Body diode) (Notes 4 & 5) I
SM
24.1 -24.9
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
Power Dissipation
Linear Derating Factor
(Notes 2 & 5)
P
D
1.25
10
W
mW/ °C
(Notes 2 & 6)
1.8
14.3
(Notes 3 & 5)
2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 2 & 5)
R θJA
100
°C/W
(Notes 2 & 6) 70
(Notes 3 & 5) 58
Thermal Resistance, Junction to Lead (Notes 5 & 7) R θJL 51
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).