Diodes DMC6040SSD - Manual (Page 2)

DMC6040SSD
Document number: DS36829 Rev. 1 - 2
2 of 9
www.diodes.com
June 2014
© Diodes Incorporated
DMC6040SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Q1 Q2 Units
Drain-Source Voltage V
DSS
60 -60 V
Gate-Source Voltage V
GSS
±20 ±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.1
4.1 -3.1
-2.5
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
6.5
5.2 -3.9
-3.1
A
Maximum Body Diode Forward Current (Note 6) I
S
2.1 -2.1 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
28 -19 A
Avalanche Current (Note 7) L = 0.1mH I
AS
17.2 -17.6 A
Avalanche Energy (Note 7) L = 0.1mH E
AS
14.7 15.4 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.24
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
101
°C/W
t < 10s 61
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.56
W
T
A
= +70°C 1.0
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
80
°C/W t<10s 49
Thermal Resistance, Junction to Case (Note 6) R
θJC
14.7
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics N-Channel Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
60 ⎯ ⎯ V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 µA V
DS
= 48V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1 ⎯ 3 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 33 40
mΩ
V
GS
= 10V, I
D
= 8A
⎯ 37 55 V
GS
= 4.5V, I
D
= 5A
Diode Forward Voltage V
SD
⎯ 0.7 1.2 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 1130 ⎯
pF V
DS
= 15V, V
GS
= 0V f = 1.0MHz Output Capacitance C
oss
⎯ 69 ⎯
Reverse Transfer Capacitance C
rss
⎯ 42 ⎯
Gate Resistance R
G
⎯ 1.7 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 10V) Q
g
⎯ 20.8 ⎯
nC V
DS
= 30V, I
D
= 4.3A
Total Gate Charge (V
GS
= 4.5V) Q
g
⎯ 9.4 ⎯
Gate-Source Charge Q
gs
⎯ 3.3 ⎯
Gate-Drain Charge Q
gd
⎯ 3.0 ⎯
Turn-On Delay Time t
D(on)
⎯ 3.6 ⎯
nS
V
GS
= 10V, V
DD
= 30V, R
G
= 6 Ω,
I
D
= 4.3A
Turn-On Rise Time t
r
⎯ 1.8 ⎯
Turn-Off Delay Time t
D(off)
⎯ 20.1 ⎯
Turn-Off Fall Time t
f
⎯ 4.3 ⎯
Body Diode Reverse Recovery Time t
rr
⎯ 14.2 ⎯ nS I
S
= 4.3A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
⎯ 7.5 ⎯ nC I
S
= 4.3A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting T
A
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.