Dmc6070lfdh advanced information, Electrical characteristics p-channel, Dmc6070lfdh – Diodes DMC6070LFDH User Manual

Page 6

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POWERDI is a registered trademark of Diodes Incorporated.

DMC6070LFDH

Document number: DS36083 Rev. 6 - 2

6 of 10

www.diodes.com

November 2013

© Diodes Incorporated

DMC6070LFDH

ADVANCED INFORMATION



Electrical Characteristics P-CHANNEL

– Q2

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage

BV

DSS

-60

V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

-1

μA

V

DS

= -60V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100 nA

V

GS

= ±16V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

V

GS(th)

-1

-3 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

115 150

mΩ

V

GS

= -10V, I

D

= -1A

170 250

V

GS

= -4.5V, I

D

= -0.5A

Forward Transfer Admittance

|Y

fs

|

2.8

S

V

DS

= -5V, I

D

= -1A

Diode Forward Voltage

V

SD

-0.7 -1.2 V V

GS

= 0V, I

S

= -2A

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

C

iss

612

pF

V

DS

= -20V, V

GS

= 0V,

f = 1MHz

Output Capacitance

C

oss

36

pF

Reverse Transfer Capacitance

C

rss

26

pF

Gate Resistance

R

g

13

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= -10V)

Q

g

8.9

nC

V

DS

= -30V, I

D

= -2A

Total Gate Charge (V

GS

= -4.5V)

Q

g

4.3

nC

Gate-Source Charge

Q

gs

1.4

nC

Gate-Drain Charge

Q

gd

1.7

nC

Turn-On Delay Time

t

D(on)

7.6

ns

V

GS

= -10V, V

DS

= -30V,

R

G

= 50Ω, I

D

= -1A

Turn-On Rise Time

t

r

11.6

ns

Turn-Off Delay Time

t

D(off)

79.8

ns

Turn-Off Fall Time

t

f

37.8

ns

Notes:

8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to production testing
















0

2

4

6

8

0

1

2

3

4

5

10

-V , DRAIN -SOURCE VOLTAGE (V)

Figure 13 Typical Output Characteristics

DS

-I

, D

R

AI

N

C

U

R

R

E

N

T

(A

)

D

V

= -3.0V

GS

V

= -3.5V

GS

V

= -4.0V

GS

V

= -4.5V

GS

V

= -10V

GS

V

= -2.8V

GS

V

= -2.5V

GS

0

2

4

6

8

0

1

2

3

4

5

10

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 14 Typical Transfer Characteristics

-I

,

D

R

AI

N

C

U

R

R

E

N

T (

A

)

D

T = 150 C

A

T = 125 C

A

T = 85 C

A

T = 25 C

A

T = -55 C

A

V

= -5.0V

DS

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