Diodes DMS2120LFWB - Manual (Page 2)

SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
2 of 7
www.diodes.com
September 2012
© Diodes Incorporated
DMS2120LFWB
NEW PROD
UC
T
Maximum Ratings – TOTAL DEVICE
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
1.5 W
Thermal Resistance, Junction to Ambient R θJA 85 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Maximum Ratings – P-CHANNEL MOSFET – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
-20 V
Gate-Source Voltage V
GSS
±12 V
Drain Current (Note 5) I
D
-2.9 A
Pulsed Drain Current (Note 6) I DM
-10 A
Maximum Ratings – SBR – D1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
20 V
RMS Reverse Voltage V
R(RMS)
14 V
Average Rectified Output Current I O
1 A
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
I
FSM
3 A
Electrical Characteristics – P-CHANNEL MOSFET – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 μA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I GSS
⎯
⎯ ⎯
⎯ ±100
±800
nA
V GS =
±8V, V
DS = 0V
V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.45 ⎯ -1.3 V V DS = V GS , I D = -250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯
70
84
100
95
120
150 m
Ω
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= -1.8V, I
D
= -1.0A
Forward Transfer Admittance |Y
fs
|
⎯ 8 ⎯ S V
DS
= -5V, I
D
= -2.8A
Diode Forward Voltage (Note 7) V
SD
⎯ 0.42 -1.2 V V
GS
= 0V, I
S
= -1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 632 ⎯ pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 65 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 54 ⎯ pF
Electrical Characteristics – SBR – D1
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V
(BR)R
20 ⎯ ⎯ V I
R
= 1mA
Forward Voltage V
F
⎯
⎯
⎯
⎯
0.45
0.52
V
I
F
= 0.5A
I F = 1.0A
Reverse Current (Note 7) I
R
⎯ ⎯ 80 μA
V
R
= 20V
Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.