Diodes DMHC3025LSD - Manual (Page 3)

DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
3 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMHC3025LSD
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 0.5 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±1 μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1 — 2 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 19 25
mΩ
V
GS
= 10V, I
D
= 5A
— 26 40 V
GS
= 4.5V, I
D
= 4A
Forward Transfer Admittance |Y
fs
| — 4 — S V
DS
= 5V, I
D
= 5A
Diode Forward Voltage V
SD
— 0.70 1.2 V V
GS
= 0V, I
S
= 1.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 590 —
pF
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
— 122 —
Reverse Transfer Capacitance C
rss
— 58 —
Gate resistance R
g
— 1.5 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 5.4 —
nC V
DS
= 15V, I
D
= 7.8A
Total Gate Charge (V
GS
= 10V) Q
g
— 11.7 —
Gate-Source Charge Q
gs
— 1.8 —
Gate-Drain Charge Q
gd
— 2.1 —
Turn-On Delay Time t
D(on)
— 11.2 —
ns
V
DD
= 15V, V
GS
= 4.5V,
R
L
= 2.4Ω, R
G
= 1Ω,
Turn-On Rise Time t
r
— 15 —
Turn-Off Delay Time t
D(off)
— 17.5 —
Turn-Off Fall Time t
f
— 8.7 —
Reverse Recovery Time t
rr
— 18.3 — ns
I
F
= 12A, di/dt = 500A/μs
Reverse Recovery Charge Q
rr
— 12 — nC
Electrical Characteristics P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current I
DSS
— — -0.5 μA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±1 μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-1 — -2 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
— 43 50
mΩ
V
GS
= -10V, I
D
= -5A
— 68 80 V
GS
= -4.5V, I
D
= -4A
Forward Transfer Admittance |Y
fs
| — 3.5 — S V
DS
= -5V, I
D
= -5A
Diode Forward Voltage V
SD
— -0.7 -1.2 V V
GS
= 0V, I
S
= -1.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 631 — pF
V
DS
= -15V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
— 137 — pF
Reverse Transfer Capacitance C
rss
— 70 — pF
Gate resistance R
g
— 10.8 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 5.5 — nC
V
DS
= -15V, I
D
= -6A
Total Gate Charge (V
GS
= 10V) Q
g
— 11.4 — nC
Gate-Source Charge Q
gs
— 1.8 — nC
Gate-Drain Charge Q
gd
— 2.4 — nC
Turn-On Delay Time t
D(on)
— 7.5 — ns
V
DD
= -15V, V
GS
= -10V,
R
G
= 6Ω, I
D
= -1A
Turn-On Rise Time t
r
— 4.9 — ns
Turn-Off Delay Time t
D(off)
— 28.2 — ns
Turn-Off Fall Time t
f
— 13.5 — ns
Reverse Recovery Time t
rr
— 15.1 — ns
I
F
= 12A, di/dt = 500A/μs
Reverse Recovery Charge Q
rr
— 15.3 — nC
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.