Diodes DMG4710SSS - Manual (Page 4)

DMG4710SSS
Document number: DS32055 Rev. 6 - 2
4 of 6
www.diodes.com
November 2010
© Diodes Incorporated
DMG4710SSS
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.5
1.0
1.5
2.0
2.5
3.0
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
I = 100mA
D
0
4
8
12
16
20
0 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0.2
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
1,000
10,000
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
100
C
iss
C
rss
C
oss
f = 1MHz
0 10 20 30
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(µ
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
0 5 10 15 20 25 30 35 40 45
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
V = 15V
I = 12.7A
DS
D