Diodes DMHC4035LSD - Manual (Page 3)

DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
3 of 9
www.diodes.com
January 2014
© Diodes Incorporated
DMHC4035LSD
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Electrical Characteristics N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
40 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1 — 3 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 26 45
mΩ
V
GS
= 10V, I
D
= 3.9A
— 35 58 V
GS
= 4.5V, I
D
= 3.5A
Diode Forward Voltage V
SD
— 0.7 1 V V
GS
= 0V, I
S
= 1.25A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 574 —
pF
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
— 87.8 —
Reverse Transfer Capacitance C
rss
— 38.7 —
Gate resistance R
g
— 1.6 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 5.9 —
nC V
DS
= 20V, I
D
= 3.9A
Total Gate Charge (V
GS
= 10V) Q
g
— 12.5 —
Gate-Source Charge Q
gs
— 1.7 —
Gate-Drain Charge Q
gd
— 2.2 —
Turn-On Delay Time t
D(on)
— 3.1 —
ns
V
DD
= 20V, V
GS
= 10V,
R
L
= 20Ω, R
G
= 6Ω,
Turn-On Rise Time t
r
— 2.6 —
Turn-Off Delay Time t
D(off)
— 15 —
Turn-Off Fall Time t
f
— 5.5 —
Reverse Recovery Time t
rr
— 6.5 — ns
I
F
= 3.9A, di/dt = 500A/μs
Reverse Recovery Charge Q
rr
— 1.2 — nC
Electrical Characteristics P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-40 — — V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current I
DSS
— — -1 μA V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-1 — -3 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
— 49 65
mΩ
V
GS
= -10V, I
D
= -4.2A
— 73 100 V
GS
= -4.5V, I
D
= -3.3A
Diode Forward Voltage V
SD
— -0.7 -1.2 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 587 — pF
V
DS
= -20V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
— 88.1 — pF
Reverse Transfer Capacitance C
rss
— 40.2 — pF
Gate resistance R
g
— 12.3 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
— 5.4 — nC
V
DS
= -20V, I
D
= -4.2A
Total Gate Charge (V
GS
= -10V) Q
g
— 11.1 — nC
Gate-Source Charge Q
gs
— 1.5 — nC
Gate-Drain Charge Q
gd
— 2 — nC
Turn-On Delay Time t
D(on)
— 3.6 — ns
V
DD
= -15V, V
GS
= -10V,
R
G
= 6Ω, I
D
= -1A
Turn-On Rise Time t
r
— 2.9 — ns
Turn-Off Delay Time t
D(off)
— 36.3 — ns
Turn-Off Fall Time t
f
— 15.3 — ns
Reverse Recovery Time t
rr
— 15.5 — ns
I
F
= -4.2A, di/dt = 500A/μs
Reverse Recovery Charge Q
rr
— 16.9 — nC
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.