Diodes DMG4712SSS - Manual

DMG4712SSS
Document number: DS32040 Rev. 6 - 2
1 of 6
www.diodes.com
August 2010
© Diodes Incorporated
DMG4712SSS
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
• High Density UMOS with Schottky Barrier Diode
•
Low Leakage Current at High Temperature
• High
Conversion Efficiency
• Low
On-Resistance
• Low Input Capacitance
•
Fast Switching Speed
• Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
•
UIS Tested, R G Tested
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram Below
•
Marking Information: See Page 5
• Ordering Information: See Page 5
•
Weight: 0.072 grams (approximate)
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
30 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 85°C
I D
11.2
6.6
A
Pulsed Drain Current (Note 4) I
DM
63 A
Avalanche Current (Notes 4 & 5) I
AR
30 A
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH E
AR
45 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P
D
1.55 W
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 3) R θJA 81.3 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5.
I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C. L = 0.1mH, V
DD
= 0V, R
G
= 0 Ω, rated V
DS
= 30V, and V
GS
= 10V.
Top View Top View
Internal Schematic
S
D
D
G
D
D
S
S
D iodes Schottky I ntegrated M O S FET