Diodes DMS3015SSS - Manual (Page 4)

DMS3015SSS
Document number: DS32096 Rev. 4 - 2
4 of 6
www.diodes.com
September 2010
© Diodes Incorporated
DMS3015SSS
NEW PROD
UC
T
0 5 10 15 20 25 30
Fig. 9 Typical C apacitance
V , DRAIN -SOURCE VOLTAGE (V)
DS
10
100
1,000
10,000
C
, C
A
PAC
IT
AN
C
E
(
p
F
)
f = 1MHz
C
iss
C
oss
C
rss
0 5 10 15 20 25 30
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN -SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I
, DR
A
IN
-S
O
U
R
CE
L
E
A
K
A
G
E
CU
RR
E
NT
(
µ
A
)
DS
S
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25 30 35
Q , OTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate C harge
g
T
0
2
4
6
8
10
V
, A
T
E
-SO
U
R
C
E
VO
L
T
AG
E
(V
)
GS
G
V = 15V
I = 8.8A
DS
D
Fig. 12 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t),
T
R
A
N
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 68°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1