Dms3014sss new prod uc t, Dms3014sss – Diodes DMS3014SSS User Manual

Page 3

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DMS3014SSS

Document number: DS32265 Rev. 3 - 2

3 of 6

www.diodes.com

September 2010

© Diodes Incorporated

DMS3014SSS

NEW PROD

UC

T




0.05

0

10

20

15

25

30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

R

,

DRAIN

-S

OURCE ON-

R

ESI

ST

ANCE (

)

DS

(O

N)

Ω

V

= 2.5V

GS

V

= 4.5V

GS

V

= 10V

GS

5

0

0.04

0.01

0.02

0.03

0

5

10

15

20

25

30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

V

= 4.5V

GS

T = 125°C

A

0

0.01

0.02

0.04

R

,

D

R

AI

N-

S

O

U

R

C

E

O

N-

R

ESI

S

T

AN

C

E (

)

DS

(O

N)

Ω

0.03

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

R

, DR

AIN-

SOUR

CE

ON-

R

ESI

S

T

ANCE (

N

ORM

A

L

IZ

E

D)

DS

O

N

V

= 4.5V

I = 10A

GS

D

V

= 10V

I = 20A

GS

D

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 6 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0

0.01

0.03

R

, D

R

AI

N-

S

O

U

R

C

E

O

N-

R

ES

IS

T

AN

C

E (

)

DSO

N

Ω

R

, D

R

AI

N-

S

O

U

R

C

E

O

N-

R

ES

IS

T

AN

C

E (

)

DSO

N

Ω

0.02

V

= 4.5V

I = 10A

GS

D

V

= 10V

I = 20A

GS

D

0

0.5

1.0

1.5

2.0

2.5

3.0

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

A

V

, G

A

TE THR

E

SHO

L

D

VO

L

T

AG

E (

V

)

GS

(T

H

)

I = 10mA

D

0

0.4

0.6

0.8

1.0

1.2

Fig. 8 Diode Forward Voltage vs. Current

V

, SOURCE-DRAIN VOLTAGE (V)

SD

0.2

0

2

4

6

8

10

12

14

16

18

20

I,

S

O

U

R

C

E

C

U

R

R

EN

T

(A

)

S

T = 25°C

A


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