Diodes DESD3V3S1BL - Manual (Page 2)

DESD3V3S1BL
Document number: DS35995 Rev. 3 - 2
2 of 4
www.diodes.com
March 2014
© Diodes Incorporated
DESD3V3S1BL
Maximum Ratings
(@T
A
= +25°C unless otherwise specified)
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P
PP
35 W 8/20μs, Per Figure 3
Peak Pulse Current I
PP
5 A 8/20μs, Per Figure 3
ESD Protection – Contact Discharge V
ESD_Contact
±25 kV IEC 61000-4-2 Standard
ESD Protection – Air Discharge V
ESD_Air
±30 kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
500 C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V
RWM
— — 3.3 V —
Channel Leakage Current (Note 6) I
RM
— 10 100 nA V
RWM
= 3.3V
Clamping Voltage, Positive Transients V
CL
—
—

4.5
5.8 5.4
7.0
V
I
PP
= 1A, tp = 8/20μS
I
PP
= 5A, tp = 8/20μS
Breakdown Voltage V
BR
3.8 — 6.5 V I
R
= 1mA
Differential Resistance R
DIF
— 0.3 — Ω I
R
= 1A
Channel Input Capacitance C
T
— 10 13 pF V
R
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0 125 175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
, P
O
WE
R
DI
SSI
P
AT
IO
N (
m
W
)
D
25 100 50 75 150
25
75
125
250
175
Note 5
200
225
0
50
25 50 75 100 125 150
P
E
A
K
P
U
LS
E
D
E
R
A
T
IN
G
%
O
F
P
E
AK
PO
W
E
R O
R
CUR
R
ENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200