Thermal characteristics, Electrical characteristics – Diodes DESD3V3S1BLP3 User Manual
Page 2
DESD3V3S1BLP3
Document number: DS36098 Rev. 3 - 2
2 of 4
December 2013
© Diodes Incorporated
DESD3V3S1BLP3
ADVAN
CE I
N
F
O
RM
ATI
O
N
Thermal Characteristics
Characteristic Symbol
Value
Unit
Package Power Dissipation (Note 5)
P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
500
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
—
— 3.3 V
—
Channel Leakage Current (Note 6)
I
RM
—
10 100 nA
V
RWM
= 3.3V
Clamping Voltage, Positive Transients
V
CL
—
—
4.5
5.8
5.4
7.0
V
I
PP
= 1A, tp = 8/20μS
I
PP
= 5A, tp = 8/20μS
Breakdown Voltage
V
BR
3.8 — 6.5 V
I
R
= 1mA
Differential Resistance
R
DIF
—
0.3 — Ω
I
R
= 1A
Channel Input Capacitance
C
T
—
10 13 pF
V
R
= 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.
0
125
175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
, P
O
WE
R
DI
SSI
P
AT
IO
N (
m
W
)
D
25
100
50
75
150
25
75
125
250
175
Note 5
200
225
0
50
25
50
75
100 125
150
P
EA
K
P
U
L
SE DE
R
A
T
IN
G
%
O
F
P
E
A
K
POW
E
R OR
CUR
RENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200
0
t, TIME ( s)
Figure 3 Pulse Waveform
20
40
60
100
50
0
I
, PE
AK P
U
LS
E
CURRENT
(
%
I
)
Pp
p
P
0.1
1
10
100
1000
0
1
2
3
I
,
INST
ANT
A
N
E
OU
S RE
VERSE
CURR
EN
T
(
nA)
R
Figure 4 Typical Reverse Characteristics
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A