Drtr5v0u1so new prod uc t, Maximum ratings, Thermal characteristics – Diodes DRTR5V0U1SO User Manual
Page 2: Electrical characteristics
DRTR5V0U1SO
Document number: DS35027 Rev. 3 - 2
2 of 4
July 2013
© Diodes Incorporated
DRTR5V0U1SO
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Conditions
Peak Pulse Current
I
PP
5
A
8/20µs, Per Figure 3
ESD Protection – Contact Discharge
V
ESD_Contact
±8 kV Standard
IEC
61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±15 kV Standard
IEC
61000-4-2
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
300
mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
417 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
— — 5.5 V
—
Channel Leakage Current (Note 6, 7)
I
R
— 1 100
nA
V
R
= 3V
Reverse breakdown voltage
V
BR
6.0 — 9.0 V
I
R
= 1mA, from pin 2 to pin 3
Forward Voltage
V
F
— 0.8 — V
I
F
= 8mA
Dynamic Resistance
R
DYN
— 0.9 —
Ω
I
PP
= 1A, t
p
= 8/20
μs
I/O to GND Capacitance
C
(I/O-GND)
— 1.0 1.5 pF
V
(I/O-GND)
= 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.
7. Measured from pin 1 and pin 2 to GND.
8. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
follow
0
125
175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
25
100
50
75
150
200
Note 5
250
300
350
400
0
50
25
50
75
100
125
150
P
EAK
P
U
LS
E
D
E
R
A
T
IN
G
%
O
F
P
EAK
PO
W
E
R O
R
CUR
RENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200