Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DT1140-04LP User Manual

Page 2

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DT1140-04LP

Document number: DS36293 Rev. 2 - 2

2 of 5

www.diodes.com

September 2013

© Diodes Incorporated

DT1140-04LP

ADVAN

CE I

N

F

O

RM

ATI

O

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Conditions

Peak Pulse Current, per IEC 61000-4-5

I

PP

6 A

I/O to V

SS

, 8/20µs

Peak Pulse Power, per IEC 61000-4-5

P

PP

60

W

I/O to V

SS

, 8/20µs

Operating Voltage (DC)

V

DC

6

V

I/O to V

SS

ESD Protection – Contact Discharge, per IEC 61000-4-2

V

ESD_Contact

+20/-16 kV

I/O to V

SS

ESD Protection – Air Discharge, per IEC 61000-4-2

V

ESD_Air

+20/-18 kV

I/O to V

SS

Operating Temperature

T

OP

-55 to +85

ºC

Storage Temperature

T

STG

-55 to +150

°C




Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation Typical(Note 5)

P

D

350

mW

Thermal Resistance, Junction to Ambient Typical(Note 5)

R

JA

360 °C/W




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min

Typ

Max

Unit

Test Conditions

Reverse Working Voltage

V

RWM

5.5 V

I

R

=1mA, , I/O to V

SS

Reverse Current (Note 6)

I

R

0.5

μA

V

R

= 5V, I/O to V

SS

Reverse Breakdown Voltage

V

BR

6 —

V

I

R

= 1mA, I/O to V

SS

Forward Clamping Voltage

V

F

-1.0

-0.85 —

V

I

F

= -15mA, I/O to V

SS

Holding Voltage

V

H

5.5 — —

V —

Reverse Clamping Voltage (Note 7)

V

C

6.4 —

V

I

PP

= 1A, I/O to V

SS

, 8/20µs

Reverse Clamping Voltage (Note 7)

V

C

9 10

V

I

PP

= 6A, I/O to V

SS

, 8/20µs

Trigger Voltage

V

TRIG

— 9.5 V

ESD Clamping Voltage

V

ESD

9 —

V

TLP, 10A, tp = 100 ns, I/O to V

SS

Dynamic Reverse Resistance

R

DIF-R

0.25 —

TLP, 10A, tp = 100 ns, I/O to V

SS

Dynamic Forward Resistance

R

DIF-F

0.25 —

TLP, 10A, tp = 100 ns, V

SS

to I/O

Channel Input Capacitance

C

I/O

0.5 0.65 pF

V

I/O

= 2.5V, V

SS

= 0V, f = 1MHz

Notes:

5. Device mounted on

FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website

at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

7. Clamping voltage value is based on an 8x20µs peak pulse current (I

pp

) waveform.
























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