Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DT1240-04LP User Manual

Page 2

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DT1240-04LP

Document number: DS36312 Rev. 2 - 2

2 of 5

www.diodes.com

September 2013

© Diodes Incorporated

DT1240-04LP

ADVAN

CE I

N

F

O

RM

ATI

O

ADVANCED INFORMATION

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Conditions

Peak Pulse Current, per IEC 61000-4-5

I

PP

5.5 A

I/O to V

SS

, 8/20µs

Peak Pulse Power, per IEC 61000-4-5

P

PP

60 W

I/O to V

SS

, 8/20µs

Operating Voltage (DC)

V

DC

6

V

I/O to V

SS

ESD Protection – Contact Discharge, per IEC 61000-4-2

V

ESD_Contact

±14 kV

I/O to V

SS

ESD Protection – Air Discharge, per IEC 61000-4-2

V

ESD_Air

±16 kV

I/O to V

SS

Operating Temperature

T

OP

-55 to +85

°C

Storage Temperature

T

STG

-55 to +150

°C


Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation Typical (Note 5)

P

D

350

mW

Thermal Resistance, Junction to Ambient Typical (Note 5)

R

JA

360 °C/W


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Working Voltage

V

RWM

5.5 V

I

R

=1mA, , I/O to V

SS

Reverse Current

I

R

0.5

μA

V

R

= 5V, I/O to V

SS

Reverse Breakdown Voltage

V

BR

6 —

V

I

R

= 1mA, I/O to V

SS

Forward Clamping Voltage

V

F

-1.0

-0.85 —

V

I

F

= -15mA, I/O to V

SS

Holding Voltage

V

H

5.5 — —

V —

Reverse Clamping Voltage (Note 6)

V

C

9.4

11

V

I

PP

= 5.5A, I/O to V

SS

, 8/20µs

Trigger Voltage

V

TRIG

— 9.5 V

ESD Clamping Voltage

V

ESD

9 —

V

TLP, 10A, tp = 100 ns, I/O to V

SS

Dynamic Reverse Resistance

R

DIF-R

0.25

TLP, 10A, tp = 100 ns, I/O to V

SS

Dynamic Forward Resistance

R

DIF-F

0.25 —

TLP, 10A, tp = 100 ns, V

SS

to I/O

Channel Input Capacitance (Note7)

C

I/O

0.55 0.65 pF

V

I/O

= 2.5V, V

SS

= 0V, f = 1MHz

Delta C

I/O

C

I/OMAX

-C

I/OMIN

0.04 — pF

C

I/OMAX

-

C

I/OMIN

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.

6. Clamping voltage value is based on an 8x20µs peak pulse current (I

pp

) waveform.

7. C

I/O1

=C

PIN1

+C

PIN10

, C

I/O2

=C

PIN2

+C

PIN9

, C

I/O3

=C

PIN4

+C

PIN7

, C

I/O4

=C

PIN5

+C

PIN6

0

25

50

75

100

125

150

175

200

100

75

50

25

0

T , AMBIENT TEMPERATURE (°C)

Figure 1 Pulse Derating Curve

A

P

EA

K

P

U

LS

E

D

E

R

AT

IN

G

IN

%

O

F

PEA

K POW

E

R OR

CURRENT

6.0

6.5

7.0

7.5

8.0

8.5

9.0

9.5

-60 -40 -20

0

20 40

60 80 100 120 140 160

T , °C)

Figure 2 BV, Trigger Voltage, Holding Voltage

vs. Ambient Temperature

A

AMBIENT TEMPERATURE (

B

R

EAKD

O

WN

V

O

LT

A

G

E,

T

R

IG

G

E

R

V

O

LT

A

G

E,

HOL

D

ING V

O

L

T

AGE

(

V

)

BV

V

TRIG

V

H

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