Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DT2636-04S User Manual
Page 2
DT2636-04S
Document number: DS36468 Rev. 2 – 2
2 of 5
November 2013
© Diodes Incorporated
DT2636-04S
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified)
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
I
PP
6.5
A
8/20µs, From CH to GND
Peak Pulse Current
I
PP
6.5
A
8/20µs, From GND to CH
Peak Pulse Power
P
PP
60
W
8/20µs, From CH to GND
ESD Protection – Contact Discharge
V
ESD_Contact
±18 kV
Standard
IEC
61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±20 kV
Standard
IEC
61000-4-2
Operating Temperature
T
OP
-55 to +85
°C
—
Storage Temperature
T
STG
-55 to +150
°C
—
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation Typical (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient Typical (Note 5)
R
θJA
625
°C/W
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
— — 5.5 V
—
Channel Leakage Current (Note 6, 7)
I
R
— 1 10 nA
V
R
= 2.5V
Reverse Breakdown Voltage
V
BR
7.0 — 9.5 V
I
R
= 1mA, from CH to GND
Clamping Voltage, Positive Transients
V
CL1
— 6.8 — V
I
PP
= 1A, t
p
= 8/20μs
Clamping Voltage, Positive Transients
V
CL1
— 9 — V
I
PP
= 5A, t
p
= 8/20μs
Clamping Voltage, Negative Transients
V
CL2
— 1.5 — V
I
PP
= 1A, t
p
= 8/20μs
Forward Voltage
V
F
— 0.7 — V
I
F
= 1mA, GND to CH
Dynamic Resistance
R
DIFF
— 0.4
—
Ω
I
PP
= 1A, t
p
= 8/20μs, CH to GND
Dynamic Resistance
R
DIFF-R
— 0.45 — Ω
TLP, 20A, tp = 100 ns, CH to GND
Dynamic Resistance
R
DIFF-F
— 0.2 — Ω
TLP, 20A, tp = 100 ns, GND to CH
CH to GND Capacitance
C
(CH-GND)
— 0.75 — pF
V
(CH-GND)
= 0V, f = 1MHz
— 0.65 0.9 pF
V
(CH-GND)
= 2.5V, f = 1MHz
Delta C
CH
C
CHMAX-
C
CHMIN
— 0.04 — pF
C
CHMAX
-
C
CHMIN
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website
at
6. Short duration pulse test used to minimize self-heating effect.
7. Measured from pin 1, 2, 4 and 5 to GND.