Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DT2636-04S User Manual

Page 2

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DT2636-04S

Document number: DS36468 Rev. 2 – 2

2 of 5

www.diodes.com

November 2013

© Diodes Incorporated

DT2636-04S

ADVANCED INFORMATION




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified)

Characteristic Symbol Value Unit Conditions

Peak Pulse Current

I

PP

6.5

A

8/20µs, From CH to GND

Peak Pulse Current

I

PP

6.5

A

8/20µs, From GND to CH

Peak Pulse Power

P

PP

60

W

8/20µs, From CH to GND

ESD Protection – Contact Discharge

V

ESD_Contact

±18 kV

Standard

IEC

61000-4-2

ESD Protection – Air Discharge

V

ESD_Air

±20 kV

Standard

IEC

61000-4-2

Operating Temperature

T

OP

-55 to +85

°C

Storage Temperature

T

STG

-55 to +150

°C

Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation Typical (Note 5)

P

D

200 mW

Thermal Resistance, Junction to Ambient Typical (Note 5)

R

θJA

625

°C/W



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

V

RWM

— — 5.5 V

Channel Leakage Current (Note 6, 7)

I

R

— 1 10 nA

V

R

= 2.5V

Reverse Breakdown Voltage

V

BR

7.0 — 9.5 V

I

R

= 1mA, from CH to GND

Clamping Voltage, Positive Transients

V

CL1

— 6.8 — V

I

PP

= 1A, t

p

= 8/20μs

Clamping Voltage, Positive Transients

V

CL1

— 9 — V

I

PP

= 5A, t

p

= 8/20μs

Clamping Voltage, Negative Transients

V

CL2

— 1.5 — V

I

PP

= 1A, t

p

= 8/20μs

Forward Voltage

V

F

— 0.7 — V

I

F

= 1mA, GND to CH

Dynamic Resistance

R

DIFF

— 0.4

I

PP

= 1A, t

p

= 8/20μs, CH to GND

Dynamic Resistance

R

DIFF-R

— 0.45 — Ω

TLP, 20A, tp = 100 ns, CH to GND

Dynamic Resistance

R

DIFF-F

— 0.2 — Ω

TLP, 20A, tp = 100 ns, GND to CH

CH to GND Capacitance

C

(CH-GND)

— 0.75 — pF

V

(CH-GND)

= 0V, f = 1MHz

— 0.65 0.9 pF

V

(CH-GND)

= 2.5V, f = 1MHz

Delta C

CH

C

CHMAX-

C

CHMIN

— 0.04 — pF

C

CHMAX

-

C

CHMIN

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website

at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

7. Measured from pin 1, 2, 4 and 5 to GND.

















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