Diodes DRD (xxxx) W - Manual (Page 4)

DS30573 Rev. 10 - 2 4 of 9
www.diodes.com
DRD (xxxx) W
© Diodes Incorporated
Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
V
l(off)
0.5 ⎯ ⎯ V V
CC
= 5V, I
O
= 100 μA
Input Voltage
V
l(on)
⎯ ⎯ 3.0 V V
O
= 0.3V, I
O
= 20mA
Output Voltage V
O(on)
⎯ ⎯ 0.3V V I
O
/I
l
= 50mA/2.5mA
Input Current I
l
⎯ ⎯ 28 mA V
I
= 5V
Output Current I
O(off)
⎯ ⎯ 0.5 μA V
CC
= 50V, V
I
= 0V
DC Current Gain G
l
47 ⎯ ⎯ ⎯ V
O
= 5V, I
O
= 50mA
Gain-Bandwidth Product f
T
⎯ 200 ⎯ MHz V
CE
= 10V, I
E
= 5mA, f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
V
l(off)
-0.3 ⎯ ⎯ V V
CC
= -5V, I
O
= -100
μA
Input Voltage
V
l(on)
⎯ ⎯ -2.0 V V
O
= -0.3V, I
O
= -20mA
Output Voltage V
O(on)
⎯ ⎯ -0.3V V I
O
/I
l
= -50mA/-2.5mA
Input Current I
l
⎯ ⎯ -7.2 mA V
I
= -5V
Output Current I
O(off)
⎯ ⎯ -0.5 μA V
CC
= -50V, V
I
= 0V
DC Current Gain G
l
56 ⎯ ⎯ ⎯ V
O
= -5V, I
O
= -50mA
Gain-Bandwidth Product f
T
⎯ 200 ⎯ MHz V
CE
= -10V, I
E
= -5mA, f = 100MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
V l(off)
-0.5 ⎯ ⎯ V V CC = -5V, I O = -100
μA
Input Voltage
V
l(on)
⎯ ⎯ -3.0 V V
O
= -0.3V, I
O
= -20mA
Output Voltage V O(on)
⎯ ⎯ -0.3V V I O /I l = -50mA/-2.5mA
Input Current I
l
⎯ ⎯ -28 mA V
I
= -5V
Output Current I O(off)
⎯ ⎯ -0.5 μA V
CC = -50V, V I = 0V
DC Current Gain G
l
47 ⎯ ⎯ ⎯ V
O
= -5V, I
O
= -50mA
Gain-Bandwidth Product f
T
⎯ 200 ⎯ MHz V
CE
= -10V, I
E
= -5mA, f = 100MHz
Electrical Characteristics, Switching Diode
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 4) V
(BR)R
75 ⎯ ⎯ I
R
= 10 μA
Forward Voltage V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Reverse Current (Note 4) I
R
⎯
2.5
50
30
25
μA
μA
μA
nA V R = 75V
V
R
= 75V, T
J
= 150
°C
V
R
= 25V, T
J
= 150
°C
V
R
= 20V
Total Capacitance C
T
⎯ 4.0 pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100 Ω
Notes: 4. Short duration pulse test used to minimize self-heating effect.