Pre-biased pnp transistor characteristics – Diodes LMN400B01 User Manual
Page 5
LMN400B01
Document number: DS30699 Rev. 8 - 2
5 of 9
July 2012
© Diodes Incorporated
LMN400B01
Pre-Biased PNP Transistor Characteristics
I , COLLECTOR CURRENT (A)
Fig. 5 V
vs. I
C
CE(SAT)
C
V,
C
O
LL
E
C
T
O
R
V
O
L
T
A
G
E (
V)
CE
(S
A
T
)
I /I = 10
C B
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
I , COLLECTOR CURRENT (A)
Fig. 6 V
vs. I
C
CE(SAT)
C
V,
C
O
LL
E
C
T
O
R
V
O
L
T
A
G
E (
V)
CE
(S
A
T
)
I /I = 20
C B
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T =-55 C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 7 V
vs. I
C
BE(SAT)
C
V
, BAS
E EM
IT
T
E
R
V
O
L
T
A
G
E (
V)
BE(
SA
T
)
I /I = 10
C B
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 8 V
vs. I
C
BE(ON)
C
V
, BA
SE E
M
IT
T
E
R
V
O
L
T
A
G
E (
V
)
BE
(O
N
)
I /I = 10
V
= 5V
C B
CE
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 9 h
vs. I
C
FE
C
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
V
= 5V
CE
T =-55 C
A
°
T = 150 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = 125 C
A
°