Diodes DVR5V0W User Manual
Page 3
DVR5V0W
Document number: DS30578 Rev. 6 - 2
3 of 5
July 2011
© Diodes Incorporated
0
50
25
50
75
100
125
150
175
200
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
d
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs.
Ambient Temperature (Total Device)
A
100
150
200
0
(Note 4)
1
1,000
100
0.0001
.001
.01
1
10
.1
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
I , COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs.
Collector Current (NPN Transistor)
C
V
= 1.0V
CE
1
100
10
0.1
1
10
100
C
,
O
U
T
P
U
T
C
A
P
A
C
IT
A
N
C
E (p
F
)
OB
O
V
, COLLECTOR-BASE VOLTAGE (V)
Fig. 3 Typical Output Capacitance vs.
Collector-Base Voltage (NPN Transistor)
CB
1
10
1,000
100
0.0001 .001
.01
.1
1
10
V,
(m
V
)
CE
(
S
A
T
)
C
O
LL
E
C
T
O
R
-E
MI
T
T
E
R
SA
TURA
TI
O
N
VO
L
T
AG
E
I , COLLECTOR CURRENT (A)
Fig. 4 Typical Collector Saturation Voltage vs.
Collector Current (NPN Transistor)
C
V , ZENER VOLTAGE (V)
Fig. 5 Typical
Z
Zener Breakdown Characteristics