Diodes MMBD2004S - Manual (Page 2)

MMBD2004S
Document number: DS30281 Rev. 12 - 2
2 of 4
www.diodes.com
August 2012
© Diodes Incorporated
MMBD2004S
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Repetitive Peak Reverse Voltage V
RRM
300 V
Working Peak Reverse Voltage
DC Blocking Voltage V RWM
V
R
240 V
RMS Reverse Voltage V
R(RMS)
170 V
Forward Continuous Current (Note 5) I
FM
225 mA
Peak Repetitive Forward Current (Note 5) I
FRM
625 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0s
I
FSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
350 mW
Thermal Resistance Junction to Ambient Air (Note 5) R θJA 357 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
300 ⎯ V I
R
= 100µA
Forward Voltage V
F
⎯
0.87
1.0
V
I
F
= 20mA
I
F
= 100mA
Reverse Current (Note 6) I
R ⎯ 100
nA
µA V
R
= 240V
V
R
= 240V, T
J
= +150 °C
Total Capacitance C
T
⎯ 5.0 pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 50 ns
I
F
= I
R
= 30mA,
I
rr
= 3.0mA, R
L
= 100
Ω
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
0 120 80 40 160 200
T , AMBIENT TEMPERATURE (ºC)
Figure 1 Power Derating Curve, Total Package
A
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N (
m
W
)
D
0
100
200
300
400
500
0 400 800 1,200 1,600 2,000
I,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
m
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 2 Typical Forward Characteristics, Per Element
F
100
1.0
10
0.1
0.01
1,000