Diodes MMBD4448DW - Manual (Page 2)

MMBD4448DW
Document number: DS31035 Rev. 12 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated
MMBD4448DW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage V
R(RMS)
53 V
Forward Continuous Current (Note 5) I FM
500 mA
Average Rectified Output Current (Note 5) I
O
250 mA
Non-Repetitive Peak Forward Surge Current @ t < 1
μs
@ t < 1s
I
FSM
4
1
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 5) R θJA 625 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
75 ⎯ V I
R
= 10 μA
Forward Voltage V F
0.62
⎯
⎯
⎯
0.720
0.855
1.0
1.25
V
I F = 5.0mA
I F = 10mA
I
F
= 50mA
I
F
= 150mA
Reverse Current (Note 6) I
R
⎯
2.5
50
30
25
μA
μA
μA
nA V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V R = 20V
Total Capacitance C
T
⎯ 4.0 pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100 Ω
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating.
0
50
100
150
200
250
0 120 80 40 160 200
P
,
P
O
WE
R
D
ISSI
P
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve, Total Package (Note 5)
A
°
10
100
1,000
1
0.1
0 1.6 1.2 0.4 0.8
I
, INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(mA
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
F