Diodes MMBD4448HTM - Manual (Page 2)

MMBD4448HTM
Document number: DS30302 Rev. 8 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated
MMBD4448HTM
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
80 V
RMS Reverse Voltage V
R(RMS)
57 V
Forward Continuous Current (Note 5) I FM
500 mA
Average Rectified Output Current (Note 5) I
O
250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μs
@ t = 1.0s
I
FSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
350 mW
Thermal Resistance Junction to Ambient Air (Note 5) R θJA 357 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
80 ⎯ V I
R
= 2.5
μA
Forward Voltage V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I F = 150mA
Reverse Current (Note 6) I
R
⎯
100
50
30
25
nA
μA
μA
nA V
R
= 70V
V
R
= 75V, T
J
= 150
°C
V
R
= 25V, T
J
= 150 °C
V
R
= 20V
Total Capacitance C T
⎯ 3.5 pF V R = 6, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns V
R
= 6V, I
F
= 5mA
Notes: 5. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
50
100
150
0 25 50 75 100 125 150
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve, Total Package (Note 5)
A
°
200
250
300
10
100
1,000
1
0.1
0 1.6 1.2 0.4 0.8 I,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(mA
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
F
T = 125ºC
A
T = -40ºC
A
T = 75ºC
A
T = 25ºC
A
T = 0ºC
A