Diodes MMBD4448HCQW /AQW/ADW /CDW /SDW /TW - Manual (Page 2)

MMBD4448HCQW /AQW
/ADW /CDW /SDW /TW
Document number: DS30153 Rev. 18 - 2
2 of 4
www.diodes.com
July 2012
© Diodes Incorporated
MMBD4448HCQW /AQW
/ADW /CDW /SDW /TW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V RRM
V
RWM
V
R
80 V
RMS Reverse Voltage V
R(RMS)
57 V
Forward Continuous Current (Note 5) I FM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0s
I
FSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 5) R θJA 625 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V (BR)R
80 ⎯ V I R = 100µA
Forward Voltage V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Reverse Current (Note 6) I R
⎯
100
50
30
25
nA
µA
µA
nA V R = 70V
V R = 75V, T J = +150°C
V
R
= 25V, T
J
= +150°C
V
R
= 20V
Total Capacitance C
T
⎯ 3.5 pF V
R
= 6V, f = 1.0MHz
Reverse Recovery Time t rr
⎯ 4.0 ns V R = 6V, I F = 5mA
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
50
100
150
200
250
0 120 160 80 40 200
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve, Total Package
A
°
Note 5
10
100
1,000
1
0.1
0 1.6 1.2 0.4 0.8
I,
I
N
S
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(m
A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics
F