Diodes MMBD4448W - Manual (Page 2)

MMBD4448W
Document number: DS30095 Rev. 12 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated
MMBD4448W
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage V
R(RMS)
53 V
Forward Continuous Current (Note 4) I FM
500 mA
Average Rectified Output Current (Note 4) I
O
250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μs
@ t = 1.0s
I
FSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 4) R θJA 625 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V
(BR)R
75 ⎯ V I
R
= 10
μA
Forward Voltage V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I F = 150mA
Reverse Current (Note 5) I
R
⎯
1.0
50
30
25
μA
μA
μA
nA V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
Total Capacitance C T
⎯ 2.0 pF V R = 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Ω
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
50
100
150
200
250
P
,
P
O
WE
R
DISS
IP
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
0 120 80 40 160 200
10
100
1,000
1
0.1
0 1.6 1.2 0.4 0.8
I,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(m
A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F