Diodes MMBD5004BRM User Manual

Mmbd5004brm new prod uc t, Features, Mechanical data

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MMBD5004BRM

Document number: DS30714 Rev. 4 - 2

1 of 5

www.diodes.com

December 2009

© Diodes Incorporated

MMBD5004BRM

NEW PROD

UC

T

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY

Features

Two Series Diode Circuits Connect to Form Full Wave Bridge

Fast Switching Speed

• Low

Capacitance

400V Reverse Breakdown Voltage Rating

Lead Free/RoHS Compliant Version (Note 3)

"Green" Device (Note 4)

Mechanical Data

• Case:

SOT-26

Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Polarity: See Diagram

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.016 grams (approximate)

Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Repetitive Peak Reverse Voltage

V

RRM

400 V

Working Peak Reverse Voltage
DC Blocking Voltage

V

RWM

V

R

350 V

RMS Reverse Voltage

V

R(RMS)

247 V

Forward Continuous Current

I

F

225 mA

Peak Repetitive Forward Current

I

FRM

625 mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0ms

@ t = 1.0s

I

FSM

2.0
1.0

A


Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 1)

P

D

350 mW

Thermal Resistance Junction to Ambient Air (Note 1)

R

θJA

357

°C/W

Operating and Storage Temperature Range

T

J

,T

STG

-65 to +150

°C


Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Reverse Breakdown Voltage (Note 2)

V

(BR)R

400

V

I

R

= 150

μA

Forward Voltage

V

F



0.87

1.0

1.25

V

I

F

= 20mA

I

F

= 100mA

I

F

= 200mA

Reverse Current (Note 2)

I

R


100
100

5

nA
μA
μA

V

R

= 240V

V

R

= 240V, T

J

= 150

°C

V

R

= 360V

Total Capacitance

C

T

0.7 2.0 pF

V

R

= 0V, f = 1.0MHz

Reverse Recovery Time

t

rr

50 ns

I

F

= I

R

= 30mA,

I

rr

= 3.0mA, R

L

= 100

Ω

Notes:

1. Part mounted on polyimide substrate PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

TOP VIEW

SOT-26

Internal Schematic

TOP VIEW

AC

1

C

1

C

2

AC

2

A

1

A

2

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