Diodes MMBT4124 User Manual
Mmbt4124, Features, Mechanical data
MMBT4124
Document number: DS30105 Rev. 11 - 2
1 of 3
www.diodes.com
January 2009
© Diodes Incorporated
MMBT4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary PNP Type Available (MMBT4126)
•
Ideal for Medium Power Amplification and Switching
•
Lead, Halogen and Antimony Free, RoHS Compliant
•
"Green" Device (Notes 2 and 4)
Mechanical Data
• Case:
SOT-23
•
Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminal Connections: See Diagram
•
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.008 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current - Continuous (Note 1)
I
C
200
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
P
D
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θJA
417
°C/W
Operating and Storage and Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V
(BR)CBO
30
⎯
V
I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
25
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0
⎯
V
I
E
= 10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
50
nA
V
CB
= 20V, I
E
= 0V
Emitter Cutoff Current
I
EBO
⎯
50
nA
V
EB
= 3.0V, I
C
= 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
120
60
360
⎯
⎯
I
C
= 2.0mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.30
V
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
0.95
V
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.0
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
8.0
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Small Signal Current Gain
h
fe
120
480
⎯
V
CE
= 1.0V, I
C
= 2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
300
⎯
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
Top View
Device Schematic
E
B
C