Diodes MMDT4124 User Manual
Features, Mechanical data, Maximum ratings
MMDT4124
Document number: DS30164 Rev. 10 - 2
1 of 3
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4124
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary PNP Type Available (MMDT4126)
•
Ideal for Medium Power Amplification and Switching
•
Ultra-Small Surface Mount Package
•
Lead Free/RoHS Compliant (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
•
"Green" Device (Notes 5 and 6)
Mechanical Data
• Case:
SOT-363
•
Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.006 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current – Continuous (Note 1)
I
C
200
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Notes 1 & 2)
P
D
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θJA
625
°C/W
Operating and Storage and Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
30
⎯
V
I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
25
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0
⎯
V
I
E
= 10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
50
nA
V
CB
= 20V, I
E
= 0V
Emitter Cutoff Current
I
EBO
⎯
50
nA
V
EB
= 3.0V, I
C
= 0V
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
120
60
360
⎯
⎯
I
C
= 2.0mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.30
V
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
0.95
V
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.0
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
8.0
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Small Signal Current Gain
h
fe
120
480
⎯
V
CE
= 1.0V, I
C
= 2.0mA, f = 1.0kHz
Current Gain-Bandwidth Product
f
T
300
⎯
MHz
V
CE
= 20V, I
C
= 10mA, f = 100MHz
Noise Figure
NF
⎯
5.0
dB
V
CE
= 5.0V, I
C
= 100
μA,
R
S
= 1.0k
Ω,
f = 1.0kHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View
Device Schematic
C
2
B
1
E
1
E
2
B
2
C
1