Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP19020DG User Manual
Page 4
ZXTP19020DG
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
-25
-55
V
I
C
= -100
μA
Collector-Emitter
breakdown voltage
BV
CEO
-20
-50
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECX
-4
-8.6
V
I
E
= -100
μA, R
BC
< 1k
Ω or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECO
-4
-8.6
V
I
E
= -100
μA
Emitter-Base breakdown
voltage
BV
EBO
-7
-8.2
V
I
E
= -100
μA
Collector-Base cut-off
current
I
CBO
<1
50
0.5
nA
μA
V
CB
= -25V
V
CB
= -25V, T
amb
=100°C
Emitter cut-off current
I
EBO
<1
-50
nA
V
EB
= -5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
-40
-97
-115
-220
-47
-130
-145
-275
mV
mV
mV
mV
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -1A, I
B
= -10mA
(*)
I
C
= -2A, I
B
= -40mA
(*)
I
C
= -8A, I
B
= -800mA
(*)
Base-Emitter saturation
voltage
V
BE(sat)
-1050
-1150
mV
I
C
= -8A, I
B
= -800mA
(*)
Base-Emitter turn-on
voltage
V
BE(on)
-930
-1000
mV
I
C
= -8A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
300
200
45
450
290
70
25
900
I
C
= -100mA, V
CE
= -2V
(*)
I
C
= -2A, V
CE
= -2V
(*)
I
C
= -8A, V
CE
= -2V
(*)
I
C
= -15A, V
CE
= -2V
(*)
Transition frequency
f
T
176
MHz
I
C
= -50mA, V
CE
= -10V
f
= 50MHz
Input capacitance
C
ibo
400
pF
V
EB
= -0.5V, f
= 1MHz
(*)
Output capacitance
C
obo
36
45
pF
V
CB
= -10V, f
= 1MHz
(*)
Delay time
t
d
23
ns
I
C
= -1A, V
CC
= -10V,
I
B1
= -I
B2
= -50mA
Rise time
t
r
18.4
ns
Storage time
t
s
266
ns
Fall time
t
f
49.6
ns