Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP25015DFH User Manual
Page 4
ZXTP25015DFH
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
-15
-35
V
I
C
= -100
A
Collector-emitter breakdown
voltage (base open)
BV
CEO
-15
-30
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-base breakdown
voltage
BV
EBO
-7
-8.4
V
I
E
= -100
A
Emitter-collector breakdown
voltage (base open)
BV
ECO
-3
-8.2
V
I
E
= -100
A
Collector-base cut-off current
I
CBO
<-1
-50
-20
nA
A
V
CB
= -12V
V
CB
= -12V, T
amb
= 100°C
Emitter-base cut-off current
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector-emitter saturation
voltage
V
CE(sat)
-45
-55
mV
I
C
= -1A, I
B
= -100mA
-110
-150
mV
I
C
= -1A, I
B
= -10mA
-130
-175
mV
I
C
= -2A, I
B
= -40mA
-160
-210
mV
I
C
= -4A, I
B
= -200mA
-165
-220
mV
I
C
= -5A, I
B
= -500mA
Base-emitter saturation
voltage
V
BE(sat)
-930
-1050
mV
I
C
= -4A, I
B
= -200mA
Base-emitter turn-on voltage
V
BE(on)
-810
-900
mV
I
C
= -4A, V
CE
= -2V
Static forward current transfer
ratio
h
FE
300
450
900
I
C
= -10mA, V
CE
= -2V
200
315
I
C
= -1A, V
CE
= -2V
90
145
I
C
= -4A, V
CE
= -2V
30
I
C
= -10A, V
CE
= -2V
Transition frequency
f
T
295
MHz
I
C
= -50mA, V
CE
= -10V
f
= 100MHz
Output capacitance
C
OBO
25
30
pF
V
CB
= -10V, f
= 1MHz
Delay time
t
d
33.8
ns
V
CC
= -15V.
I
C
= -750mA,
I
B1
= I
B2
= -15mA
Rise time
t
r
43.5
ns
Storage time
t
s
196
ns
Fall time
t
f
51.7
ns