Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP25020CFF User Manual

Page 4

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ZXTP25020CFF

Issue 1 - February 2007

4

www.zetex.com

© Zetex Semiconductors plc 2007

Electrical characteristics (at T

amb

= 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit Conditions

Collector-base breakdown
voltage

BV

CBO

-25

-50

V

I

C

= -100

␮A

Collector-emitter breakdown
voltage (base open)

BV

CEO

-20

-35

V

I

C

= -10mA

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

Յ300

s; duty cycle

Յ2%.

Emitter-base breakdown
voltage

BV

EBO

-7

-8.2

V

I

E

= -100

␮A

Emitter-collector breakdown
voltage (reverse blocking)

BV

ECX

-7

-8.0

V

I

E

= -100

A

(*)

R

BC

< 10k

or -0.25 < V

BC

<0.25V

Emitter-collector breakdown
voltage (base open)

BV

ECO

-7

-8.8

V

I

E

= -100uA

(*)

Collector-base cut-off current

I

CBO

<-1

-50

nA

V

CB

= -20V

-20

␮A V

CB

= -20V, T

amb

= 100°C

Emitter-base cut-off current

I

EBO

<-1

-50

nA

V

EB

= -5.6V

Collector-emitter saturation
voltage

V

CE(sat)

-50

-65

mV

I

C

= -1A, I

B

= -100mA

(*)

-80

-110

mV

I

C

= -1A, I

B

= -20mA

(*)

-135

-185

mV

I

C

= -2A, I

B

= -40mA

(*)

-210

-260

mV

I

C

= -4.5A, I

B

= -225mA

(*)

Base-emitter saturation voltage V

BE(sat)

-950

-1050

mV

I

C

= -4.5A, I

B

= -225mA

(*)

Base-emitter turn-on voltage

V

BE(on)

-840

-950

mV

I

C

= -4.5A, V

CE

= -2V

(*)

Static forward current transfer
ratio

h

FE

200

350

500

I

C

= -10mA, V

CE

= -2V

(*)

150

250

I

C

= -1A, V

CE

= -2V

(*)

85

140

I

C

= -4A, V

CE

= -2V

(*)

40

I

C

= -10A, V

CE

= -2V

(*)

Transition frequency

f

T

285

MHz I

C

= -50mA, V

CE

= -10V

f

= 100MHz

Output capacitance

C

obo

32.4

40

pF

V

CB

= -10V, f

= 1MHz

(*)

Delay time

t

d

38.4

ns

V

CC

= -15V.

I

C

= -750mA,

I

B1

= I

B2

= -15mA.

Rise time

t

r

49.2

ns

Storage time

t

s

168

ns

Fall time

t

f

55

ns

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