Diodes MMBT2222ALP4 - Manual (Page 2)

MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
2 of 7
www.diodes.com
August 2012
© Diodes Incorporated
MMBT2222ALP4
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
75 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6 V
Collector Current - Continuous I
C
600 mA
Peak Collector Current I
CM
800 mA
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
460 mW
Power Dissipation (Note 6) P
D
1 W
Thermal Resistance, Junction to Ambient (Note 5) R θJA 272 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R θJA 120 °C/W
Thermal Resistance, Junction to Lead (Note 7) R θJL 110 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
ESD Ratings
(Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.