Diodes MMBT3906LP - Manual (Page 2)

MMBT3906LP
Document number: DS31836 Rev. 6 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated
MMBT3906LP
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-40 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-6.0 V
Collector Current I
C
-200 mA
Peak Collector Current I CM
-200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
460 mW
Thermal Resistance, Junction to Ambient (Note 5) R θJA 272 °C/W
Thermal Resistance, Junction to Leads (Note 6) R θJL 110 °C/W 
Operating and Storage and Temperature Range T
J
, T
STG
-55 to +150 °C
ESD Ratings
(Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 to < 8,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 200 to < 400 V B
Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heat sink.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.